Method of manufacturing a semiconductor device

An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components...

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Bibliographic Details
Main Authors YEH, MING-HSI, LIN, SHUN-WU, CHEN, LI-MIN, LIAN, JIAN-JOU, YANG, NENG-JYE, HUANG, KUO-BIN
Format Patent
LanguageChinese
English
Published 11.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.
Bibliography:Application Number: TW20198109438