TRANSISTOR STRUCTURE

A transistor structure including a substrate structure, a shield electrode, a gate electrode, a first dielectric layer, a silicon nitride layer, a second dielectric layer, and a third dielectric layer is provided. There is a trench in the substrate structure. The shield electrode is disposed in the...

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Bibliographic Details
Main Authors HO, CHANGIN, JIANG, YONG-KANG, CHEN, YU-HSUAN
Format Patent
LanguageChinese
English
Published 11.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor structure including a substrate structure, a shield electrode, a gate electrode, a first dielectric layer, a silicon nitride layer, a second dielectric layer, and a third dielectric layer is provided. There is a trench in the substrate structure. The shield electrode is disposed in the trench. The gate electrode is disposed in the trench and disposed on the shield electrode. The first dielectric layer is disposed between the shield electrode and the gate electrode. The silicon nitride layer is disposed between the first dielectric layer and the shield electrode. The second dielectric layer is disposed between the shield electrode and the substrate structure. The third dielectric layer is disposed between the gate electrode and the substrate structure.
Bibliography:Application Number: TW202211124587