Method for metal-organic vapor phase deposition using solutions of alkyl-indium compounds in hydrocarbons
The invention also relates to a solution consisting of a compound of formula InR3, wherein R are selected independently of one another from alkyl radicals with 1 to 6 C atoms, and at least one hydrocarbon having 1 to 8 carbon atoms, uses of the solution for producing an indium-containing layer by me...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
01.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention also relates to a solution consisting of a compound of formula InR3, wherein R are selected independently of one another from alkyl radicals with 1 to 6 C atoms, and at least one hydrocarbon having 1 to 8 carbon atoms, uses of the solution for producing an indium-containing layer by metal-organic vapor deposition, and devices for executing the method. |
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Bibliography: | Application Number: TW20165138442 |