Semiconductor substrate and fabrication method of semiconductor device

A semiconductor substrate includes a silicon carbide wafer having a first surface, a second surface parallel to the first surface, and a side surface perpendicular to the first surface and the second surface. There is a first inclined surface and/or a first curved surface between the first surface a...

Full description

Saved in:
Bibliographic Details
Main Author LIN, CHING-SHAN
Format Patent
LanguageChinese
English
Published 01.07.2023
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:A semiconductor substrate includes a silicon carbide wafer having a first surface, a second surface parallel to the first surface, and a side surface perpendicular to the first surface and the second surface. There is a first inclined surface and/or a first curved surface between the first surface and the side surface. There is a second inclined surface and/or a second curved surface between the second surface and the side surface. In the first direction parallel to the first surface, the distance A1 between the first surface and the side surface is greater than the distance A2 between the second surface and the side surface.
Bibliography:Application Number: TW202110122585