BLANK MASK, PHOTOMASK USING THE SAME AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to...

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Bibliographic Details
Main Authors LEE, HYUNG-JOO, KIM, SEONG YOON, JEONG, MIN GYO, CHOI, SUK YOUNG, LEE, GEONGON, SHIN, INKYUN, KIM, TAEWAN, KIM, SUHYEON, SON, SUNG HOON, CHO, HAHYEON
Format Patent
LanguageChinese
English
Published 21.06.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:SA1=γSL×tan θ  [Equation 1-1]where, in the Equation 1-1, the γSL is an interfacial energy between the light shielding film and a pure water and θ is a contact angle of the light shielding film measured with the pure water, is disclosed.
Bibliography:Application Number: TW202211120584