METHOD OF SIC WAFER PROCESSING

A method of wafer processing is described, the method includes the following steps. A silicon carbide wafer is provided, and the silicon carbide wafer has a first surface and an opposing second surface. A grinding process is performed on the first surface and the second surface of the silicon carbid...

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Bibliographic Details
Main Authors HSU, WENING, YU, WEN-HUAI, HUNG, SHIH
Format Patent
LanguageChinese
English
Published 11.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A method of wafer processing is described, the method includes the following steps. A silicon carbide wafer is provided, and the silicon carbide wafer has a first surface and an opposing second surface. A grinding process is performed on the first surface and the second surface of the silicon carbide wafer. A dry etching process is performed on the first surface and the second surface of the silicon carbide wafer, and make the roughness of the first surface and the second surface below 2.5 nm. A polishing process is performed on the first surface and the second surface of the silicon carbide wafer after the dry etching process.
Bibliography:Application Number: TW202211117812