Method forming semiconductor device
A semiconductor device and a method of forming a semiconductor device include forming a dielectric material, performing a wet oxidation treatment on the dielectric material, and performing a dry anneal on the dielectric material. The dielectric material may be a flowable material. The wet oxidation...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
21.02.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device and a method of forming a semiconductor device include forming a dielectric material, performing a wet oxidation treatment on the dielectric material, and performing a dry anneal on the dielectric material. The dielectric material may be a flowable material. The wet oxidation treatment may include an acid and oxidizer mixture. |
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Bibliography: | Application Number: TW202110101761 |