TWI789476B

• Main Authors: SATO, SATOSHI, TAKAMOTO, NAOHIDE, SHIGA, GOSHI
• Format: Patent
• Language: Chinese
• Published: 11.01.2023
• Subjects: ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ORGANIC MACROMOLECULAR COMPOUNDS; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; THEIR PREPARATION OR CHEMICAL WORKING-UP; TRANSPORTING; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS; USE OF MATERIALS AS ADHESIVES; WELDING; WORKING BY LASER BEAM

Provided is a semiconductor back surface adhering film which has excellent laser markability and excellent infrared shielding properties. A semiconductor back surface adhering film according to the present invention is closely adhered to the back surface of a semiconductor when in use, and comprises: a layer A which contains a black pigment and serves as the outermost layer when closely adhered to the back surface of the semiconductor; and a layer B which contains a black pigment and has a higher absorbance at the wavelength of 1,300 nm than the layer A, while serving as an inner layer that is positioned between the outermost layer and a semiconductor element when closely adhered to the back surface of the semiconductor.