Method for measuring photomasks

The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps:recording an aerial image of at least one region of the photomask,defining at least one region of interest,ascertaining structure edges in at least one region of interest,providin...

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Bibliographic Details
Main Authors BEYER, DIRK, SIMAKOV, DMITRY, THALER, THOMAS, STEINERT, STEFFEN, BUTTGEREIT, UTE
Format Patent
LanguageChinese
English
Published 01.01.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps:recording an aerial image of at least one region of the photomask,defining at least one region of interest,ascertaining structure edges in at least one region of interest,providing desired structures to be produced by the photomask,adapting the ascertained structure edges to the desired structures, anddisplacing the adapted structure edges by means of the results of a separate registration measurement.
Bibliography:Application Number: TW202110105486