OPTOELECTRONIC SEMICONDUCTOR DEVICE

An optoelectronic semiconductor device includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a first active structure between the first semiconductor layer and the second semiconductor layer. The optoelectronic semiconductor device further includes...

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Bibliographic Details
Main Authors Chan, Yao-Ning, Lee, Shih-Chang, Chen, Yi-Ming, Wu, Fan-Lei, Tsai, Chun-Fu
Format Patent
LanguageChinese
English
Published 01.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An optoelectronic semiconductor device includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a first active structure between the first semiconductor layer and the second semiconductor layer. The optoelectronic semiconductor device further includes a third semiconductor layer on the second semiconductor layer, a fourth semiconductor layer on the third semiconductor layer, and a second active structure between the third semiconductor layer and the fourth semiconductor layer. The optoelectronic semiconductor device has an emitting spectrum includes a first peak wavelength w1 with first emitting intensity I1 and a second peak wavelength w2 with second emitting intensity I2, wherein w2>w1, and the first peak wavelength w1 and the second peak wavelength w2 are between 750nm to 1700 nm. 12/11 is 0.2~2.
Bibliography:Application Number: TW202110146603