Aluminum-based gallium nitride integrated circuits

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comp...

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Bibliographic Details
Main Authors FIORENZA, JAMES G, PROUDMAN, ANDREW, GREEN, LESLIE P, STUBLER, PETER R, SRIVASTAVA, PUNEET KUMAR, MURPHY, DENIS MICHAEL, FLANDERS, KENNETH FRANCIS, PIEDRA, DANIEL
Format Patent
LanguageChinese
English
Published 11.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
Bibliography:Application Number: TW20209136100