Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same

• Main Authors: RICKETTS, DANIEL OHEN, JIN, YUHUI, PIECH, GARRETT ANDREW, DAHLBERG, RACHEL EILEEN, HUANG, TIAN
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS

Silica-containing substrates including vias with a narrow waist, and related devices and methods are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol% silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter less than or equal to 100 µm at the first surface, a second diameter less than or equal to 100 µm at the second surface, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.