HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^...

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Bibliographic Details
Main Authors PARK, SANGCHOL, KIM, YOUNG KEUN, JUNG, HYEONIL, KIM, SEUNGHYUN, KIM, SANGMI
Format Patent
LanguageChinese
English
Published 01.09.2022
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method, wherein the hardmask composition includes a polymer including a structural unit represented by chemical formula 1 and a solvent. In the chemical formula 1, the definitions of A, B and R^1 to R^5 are the same as described in the specification.
Bibliography:Application Number: TW20209135081