Field effect transistor (fet) comprising channels with silicon germanium (sige)

A device comprising a substrate and a first transistor formed over the substrate. The first transistor includes a first source disposed over the substrate, a first drain disposed over the substrate, a first plurality of channels coupled to the first source and the first drain, and a first gate surro...

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Bibliographic Details
Main Authors LIM, KWANYONG, RIM, KERN, SONG, STANLEY SEUNGCHUL, YUAN, JUN
Format Patent
LanguageChinese
English
Published 01.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device comprising a substrate and a first transistor formed over the substrate. The first transistor includes a first source disposed over the substrate, a first drain disposed over the substrate, a first plurality of channels coupled to the first source and the first drain, and a first gate surrounding the first plurality of channels. The first plurality of channels is located between the first source and the first drain. At least one channel includes silicon germanium (SiGe). The transistor is a field effect transistor (FET). The transistor is a gate all around (GAA) FET. The transistor may be configured to operate as a negative channel metal oxide semiconductor (NMOS) transistor. The transistor may be configured to operate as a positive channel metal oxide semiconductor (PMOS) transistor.
Bibliography:Application Number: TW20209130540