Light emitting diode device and photodetector device

A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of...

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Bibliographic Details
Main Authors DHEERAJ, DASA L, KIM, DONG CHUL, WEMAN, HELGE
Format Patent
LanguageChinese
English
Published 01.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.
Bibliography:Application Number: TW20165122161