Method and apparatus for depositing an epitaxial layer on a substrate wafer made of semiconductor material

• Main Authors: LICHTENEGGER, KORBINIAN, STETTNER, THOMAS, EDMAIER, WALTER, HECHT, HANNES
• Format: Patent
• Language: Chinese; English
• Published: 01.05.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method and an apparatus for depositing an epitaxial layer on a substrate wafer made of semiconductor material. The method comprises the arrangement of the substrate wafer and a susceptor in a deposition device such that the substrate wafer rests on the susceptor and the susceptor is held by arms of a support shaft; monitoring whether a misalignment of the susceptor exists with respect to its position relative to the position of a pre-heating ring surrounding it; monitoring whether a misalignment of the support shaft exists with respect to its position relative to the position of the pre-heating ring; if at least one of the misalignments is present, elimination of the respective misalignment; and the deposition of the epitaxial layer on the substrate wafer.