Memory device and method of manufacturing the same

A memory device is disclosed. The memory device includes: a first memory cell, including: a first transistor; a second transistor; and a first capacitor; a second memory cell, including: a third transistor; a fourth transistor; and a second capacitor; a third memory cell, including: a fifth transist...

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Bibliographic Details
Main Authors TSUI, FELIX YING-KIT, LU, HAU-YAN, KO, CHUN-YAO
Format Patent
LanguageChinese
English
Published 11.03.2022
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory device is disclosed. The memory device includes: a first memory cell, including: a first transistor; a second transistor; and a first capacitor; a second memory cell, including: a third transistor; a fourth transistor; and a second capacitor; a third memory cell, including: a fifth transistor; a sixth transistor; and a third capacitor; and a fourth memory cell, including: a seventh transistor; an eighth transistor; and a fourth capacitor; wherein an electrode of the first capacitor, an electrode of the second capacitor, an electrode of the third capacitor, and an electrode of the fourth capacitor are electrically connected to a conductor. An associated manufacturing method is also disclosed.
Bibliography:Application Number: TW20209144324