Capacitor structure and method of fabricating the same

The invention discloses a capacitor structure and a manufacturing method thereof, and the capacitor structure comprises a lower electrode plate disposed on a substrate, the lower electrode plate is provided with a plurality of grooves, a capacitor dielectric layer disposed on the lower electrode pla...

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Bibliographic Details
Main Authors HUANG, KUO-FANG, LIN, HSIN-YI, WANG, CHANG-YUE, LEE, SHIH-PING, HUANG, PINIEH
Format Patent
LanguageChinese
English
Published 21.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a capacitor structure and a manufacturing method thereof, and the capacitor structure comprises a lower electrode plate disposed on a substrate, the lower electrode plate is provided with a plurality of grooves, a capacitor dielectric layer disposed on the lower electrode plate and the grooves, and an upper electrode plate disposed on the capacitor dielectric layer. The capacitor dielectric layer and the edge of the upper electrode plate are provided with a vertical extension part extending towards the direction vertical to the top surface of the lower electrode plate.
Bibliography:Application Number: TW20209102061