Method and system for vertical power devices

A method of forming a semiconductor device includes providing an engineered substrate. The engineered substrate includes a polycrystalline ceramic core, a barrier layer encapsulating the polycrystalline ceramic core, a bonding layer coupled to the barrier layer, and a substantially single crystallin...

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Bibliographic Details
Main Authors RISBUD, DILIP, ODNOBLYUDOV, VLADIMIR, AKTAS, OZGUR
Format Patent
LanguageChinese
English
Published 11.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor device includes providing an engineered substrate. The engineered substrate includes a polycrystalline ceramic core, a barrier layer encapsulating the polycrystalline ceramic core, a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer. The method further includes forming a Schottky diode coupled to the engineered substrate. The Schottky diode has a top surface and a bottom surface. The bottom surface is coupled to the substantially single crystalline silicon layer. The method further includes forming a Schottky contact coupled to the top surface of the Schottky diode, forming a metal plating coupled to the Schottky contact, removing the engineered substrate to expose the bottom surface of the Schottky diode, and forming an ohmic contact on the bottom surface of the Schottky diode.
Bibliography:Application Number: TW20176145918