Projection exposure apparatus for semiconductor lithography with increased thermal robustness

A projection exposure apparatus for semiconductor lithography includes: a light source for generating optical used radiation by which structures arranged on a reticle can be imaged onto a wafer; a plurality of optical elements for guiding and manipulating the used radiation; and a plurality of posit...

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Bibliographic Details
Main Authors AKBARINIA, ALIREZA, LAUFER, TIMO, KEMP, ALEXANDRE, PANCHAL, AMISHKUMAR
Format Patent
LanguageChinese
English
Published 21.01.2022
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A projection exposure apparatus for semiconductor lithography includes: a light source for generating optical used radiation by which structures arranged on a reticle can be imaged onto a wafer; a plurality of optical elements for guiding and manipulating the used radiation; and a plurality of position sensors for determining the position of at least some of the optical elements. At least some of the position sensors are arranged on a measurement structure that is at least partially decoupled mechanically and/or thermally from the further components of the projection exposure apparatus. The measurement structure has at least two mechanically decoupled substructures. The first substructure has a lower coefficient of thermal expansion than the second substructure. The second substructure has a greater stiffness than the first substructure.
Bibliography:Application Number: TW20176134389