TWI748717B

A semiconductor device according to the present disclosure includes a main part that includes a semiconductor substrate, a first cladding layer provided on the semiconductor substrate, an active layer provided on the first cladding layer, and a second cladding layer provided on the active layer, and...

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Bibliographic Details
Main Author ONOE, KAZUYUKI
Format Patent
LanguageChinese
Published 01.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to the present disclosure includes a main part that includes a semiconductor substrate, a first cladding layer provided on the semiconductor substrate, an active layer provided on the first cladding layer, and a second cladding layer provided on the active layer, and in which a flat part and a mesa part are formed, the mesa part including the active layer and a first embedded layer covering a top surface of the flat part and a side surface of the mesa part, wherein the first embedded layer has a projecting part on a top surface of a portion provided in a region within a height of the mesa part from a boundary between the mesa part and the flat part in the top surface of the flat part.
Bibliography:Application Number: TW20209137607