Resistive random access memory and method of fabricating the same

Provided is a resistive random access memory (RRAM) includes a first electrode layer and a second electrode layer disposed opposite each other; a variable resistance layer located between the first electrode layer and the second electrode layer; an oxygen exchange layer located between the variable...

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Bibliographic Details
Main Authors WU, BO-LUN, HSU, PO-YEN, TSAI, SHIH-NING
Format Patent
LanguageChinese
English
Published 21.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Provided is a resistive random access memory (RRAM) includes a first electrode layer and a second electrode layer disposed opposite each other; a variable resistance layer located between the first electrode layer and the second electrode layer; an oxygen exchange layer located between the variable resistance layer and the second electrode layer; a conductive layer laterally surrounding the sidewall of the oxygen exchange layer; a first barrier layer between the conductive layer and the oxygen exchange layer and between the oxygen exchange layer and the variable resistance layer; and a second barrier layer between the conductive layer and the second electrode layer and between the second electrode layer and the oxygen exchange layer.
Bibliography:Application Number: TW20209123038