Method for manufacturing semiconductor devices and structures thereof

According to an embodiment of the present disclosure, a method of manufacturing semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer...

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Bibliographic Details
Main Authors CHEN, CHIH-HAO, YEH, CHAO-KUEI, LIN, JIANN-HORNG, WU, YING-HAO, TIAN, CHIH-SHENG, PENG, TAI-YEN
Format Patent
LanguageChinese
English
Published 21.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to an embodiment of the present disclosure, a method of manufacturing semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer and exposing upper portion of the line-end cut pattern; reducing a width of the line-end cut pattern; etching the spacer layer to expose the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the reduced line-end cut pattern as an etch mask.
Bibliography:Application Number: TW20187139211