Semiconductor structure and semiconductor processing method

Example embodiments relating to forming gate structures, e.g., for Fin Field Effect Transistors (FinFETs), are described. In an embodiment, a structure includes first and second device regions comprising first and second FinFETs, respectively, on a substrate. A distance between neighboring gate stru...

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Bibliographic Details
Main Authors JANG, SYUN MING, LIN, CHIH HAN, LIN, SHIH YAO, CHEN, CHAO CHENG, CHANG, MING CHING, KAO, KUEI YU
Format Patent
LanguageChinese
English
Published 11.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Example embodiments relating to forming gate structures, e.g., for Fin Field Effect Transistors (FinFETs), are described. In an embodiment, a structure includes first and second device regions comprising first and second FinFETs, respectively, on a substrate. A distance between neighboring gate structures of the first FinFETs is less than a distance between neighboring gate structures of the second FinFETs. A gate structure of at least one of the first FinFETs has a first and second width at a level of and below, respectively, a top surface of a first fin. The first width is greater than the second width. A second gate structure of at least one of the second FinFETs has a third and fourth width at a level of and below, respectively a top surface of a second fin. A difference between the first and second widths is greater than a difference between the third and fourth widths.
Bibliography:Application Number: TW20198108440