Resistive random access memory and method of manufacturing the same

Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes a stacked structure and a bit line structure. The stacked structure is disposed on a substrate. The stacked structure includes a bottom electrode, a top electrode, and a resi...

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Bibliographic Details
Main Authors WU, BO-LUN, HSU, PO-YEN, TSAI, SHIH-NING, KUO, TSE-MIAN
Format Patent
LanguageChinese
English
Published 21.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes a stacked structure and a bit line structure. The stacked structure is disposed on a substrate. The stacked structure includes a bottom electrode, a top electrode, and a resistance-switching layer. The bottom electrode is disposed on the substrate. The top electrode is disposed on the bottom electrode. The resistance-switching layer is located between the bottom electrode and the top electrode. The bit line structure covers a top surface of the stacked structure and covers a portion of a sidewall of the stacked structure. The bit line structure is electrically connected to the stacked structure.
Bibliography:Application Number: TW20209119394