Small-pitch image sensor

Image sensor includes a first semiconductor material and a plurality of first doped regions disposed in the semiconductor material. The plurality of first doped regions is part of a plurality of photodiodes to receive light and convert the light into image charge. A second semiconductor material is...

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Bibliographic Details
Main Authors VENEZIA, VINCENT, LIU, YUANLIANG
Format Patent
LanguageChinese
English
Published 21.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Image sensor includes a first semiconductor material and a plurality of first doped regions disposed in the semiconductor material. The plurality of first doped regions is part of a plurality of photodiodes to receive light and convert the light into image charge. A second semiconductor material is disposed on the first semiconductor material, and a plurality of second doped regions is disposed in the second semiconductor. The plurality of second doped regions is electrically coupled to the plurality of first doped regions, and the plurality of second doped regions is part of the plurality of photodiodes.
Bibliography:Application Number: TW20198140009