Storage bitcell

A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage b...

Full description

Saved in:
Bibliographic Details
Main Authors FLYNN, DAVID WALTER, DAS, SHIDHARTHA, PRABHAT, PRANAY, BULL, DAVID MICHAEL, SAVANTH, PARAMESHWARAPPA ANAND KUMAR, MYERS, JAMES EDWARD
Format Patent
LanguageChinese
English
Published 01.04.2021
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.
Bibliography:Application Number: TW20176111376