A method for fabricating semiconductor device

A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a sec...

Full description

Saved in:
Bibliographic Details
Main Authors CHEN, CHUN CHANG, CHEN, SZ FAN, WU, CHUN CHANG, YANG, SHUN SHING, CHENG, CHIHY YUAN, SHIU, FENG JIA, CHANG, WEI LIN, KUO, CHING SEN
Format Patent
LanguageChinese
English
Published 21.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.
Bibliography:Application Number: TW20187129117