TWI720527B

A semiconductor device comprises a first chip including a first semiconductor substrate, a first semiconductor element on the first semiconductor substrate, a first wiring layer to be connected to the first semiconductor element, and a first pad to be connected to the first wiring layer, and a secon...

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Bibliographic Details
Main Authors KATO, ATSUSHI, HATAZAKI, AKITSUGU
Format Patent
LanguageChinese
Published 01.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprises a first chip including a first semiconductor substrate, a first semiconductor element on the first semiconductor substrate, a first wiring layer to be connected to the first semiconductor element, and a first pad to be connected to the first wiring layer, and a second chip including a second semiconductor substrate, a second semiconductor element on the second semiconductor substrate, a second wiring layer to be connected to the second semiconductor element, and a second pad to be connected to the second wiring layer and joined to the first pad. At least one of the first pad and the second pad includes a first metal layer to be joined to the other pad, a second metal layer having a coefficient of thermal expansion higher than that of the first metal layer, and a barrier metal layer between the first metal layer and the second metal layer.
Bibliography:Application Number: TW20198123221