SEMICONDUCTOR STORAGE DEVICE

A semiconductor storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a contact plug, a memory trench extending between the second conductive layer and the third conductive layer. The memory trench is formed around the contact plug, and surrounds a fi...

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Bibliographic Details
Main Authors NAKATSUKA, KEISUKE, UTSUMI, TETSUAKI, SHIMOJO, YOSHIRO, KUBOTA, YOSHITAKA, KATSUMATA, RYOTA
Format Patent
LanguageChinese
English
Published 01.02.2021
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a contact plug, a memory trench extending between the second conductive layer and the third conductive layer. The memory trench is formed around the contact plug, and surrounds a first area in which the contact plug is disposed. A second area is separated from the first area and includes a pillar penetrating the first conductive layer. The second conductive layer extends between the first and second areas, and is connected to the first conductive layer. The third conductive layer is on the opposite side of the first area to the second area, and is connected to the first conductive layer.
Bibliography:Application Number: TW20198125176