Methods of forming replacement gate structures on transistor devices

One illustrative IC product disclosed herein includes first and second final gate structures and an insulating gate separation structure positioned between the first and second final gate structures. In one embodiment, the insulating gate separation structure has a stepped bottom surface with a subs...

Full description

Saved in:
Bibliographic Details
Main Authors PARK, CHANG SEO, HAN, TAO, LIU, JINPING, YANG, YONG MO, YANG, HYUCK SOO, YAMAGUCHI, SHIMPEI, SHU, JIEHUI
Format Patent
LanguageChinese
English
Published 01.01.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:One illustrative IC product disclosed herein includes first and second final gate structures and an insulating gate separation structure positioned between the first and second final gate structures. In one embodiment, the insulating gate separation structure has a stepped bottom surface with a substantially horizontally oriented bottom central surface that is surrounded by a substantially horizontally oriented recessed surface, wherein the substantially horizontally oriented bottom central surface is positioned a first level above the substrate and the substantially horizontally oriented recessed surface is positioned at a second level above the substrate, wherein the second level is greater than the first level.
Bibliography:Application Number: TW20187117707