Non-volatile memory and manufacturing method thereof

A non-volatile memory structure includes a semiconductor substrate and a first layer of a first dopant type in the semiconductor substrate. The non-volatile memory structure further includes a first well region of a second dopant type over the first layer, a second well region of the second dopant t...

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Bibliographic Details
Main Authors TSUI, FELIX YING-KIT, LU, HAU-YAN, KO, CHUN-YAO, CHEN, SHIH-HSIEN, KUO, LIANG-TAI
Format Patent
LanguageChinese
English
Published 01.11.2020
Subjects
ELECTRICITY
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Summary:A non-volatile memory structure includes a semiconductor substrate and a first layer of a first dopant type in the semiconductor substrate. The non-volatile memory structure further includes a first well region of a second dopant type over the first layer, a second well region of the second dopant type over the first layer and spaced apart from the first well region, and a third well region of the first dopant type disposed between the first well region and the second well region and extending downward to the first layer.
Bibliography:Application Number: TW20165134166