SILICON GERMANIUM-ON-INSULATOR STRUCTURE

A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact wit...

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Bibliographic Details
Main Authors THOMAS, SHAWN G, WANG, GANG
Format Patent
LanguageChinese
English
Published 01.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A multilayer structure comprising: a silicon-on-insulator substrate comprising (i) a single crystal semiconductor handle layer, (ii) a dielectric layer in interfacial contact with the front surface of the single crystal semiconductor handle layer, and (iii) a silicon layer in interfacial contact with the dielectric layer, wherein the silicon layer comprises a hydride-terminated surface; a first silicon germanium layer in interfacial contact with the hydride-terminated surface of the silicon layer, wherein the first silicon germanium layer comprises silicon and germanium and has a formula of SixGe1-x, wherein x is between about 0.2 and about 0.8, molar ratio; and a second silicon germanium layer in interfacial contact with the first silicon germanium layer, wherein the second silicon germanium layer comprises silicon and germanium and has a formula SiyGe1-y, wherein y is between about 0.3 and about 0.9, molar ratio.
Bibliography:Application Number: TW20209106936