Semiconductor structures and methods of fabricating the same and methods of fabricating semiconductor transistor structures

• Main Authors: CHOU, CHI-YU, TANG, TSUNG-TA, WANG, CHUNIEH, PAI, YUEHING, YANG, CHI-JEN, LEE, HSIEN-MING, YANG, HUAI-TEI, LIN, PO-YU, WANG, YI-TING
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.