Method of forming cobalt contact module and cobalt contact module formed thereby

The disclosure relates to a method of forming a Co contact module, the method including depositing a liner layer on a trench block, partially plating the lined trenches with Co as a first metal such that the resulting Co layer has a top surface below an opening top surface of a shallowest trench, de...

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Bibliographic Details
Main Authors HUANG, HAIGOU, WU, CHANG-HONG, FANG, QIANG, AHMED, SHAFAAT, KOLI, DINESH R
Format Patent
LanguageChinese
English
Published 11.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure relates to a method of forming a Co contact module, the method including depositing a liner layer on a trench block, partially plating the lined trenches with Co as a first metal such that the resulting Co layer has a top surface below an opening top surface of a shallowest trench, depositing a second metal on the Co layer and exposed surfaces of the liner layer, planarizing the second metal layer, and etching the second metal layer and portions of the liner layer. The disclosure also relates to a Co contact module formed by the noted method.
Bibliography:Application Number: TW20187105278