Resistive random access memory structure and manufacturing method thereof

A resistive random access memory (RRAM) structure and its manufacturing method are provided. The RRAM structure includes a bottom electrode layer formed on a substrate, a resistance switching layer formed on the bottom electrode layer, and a top electrode layer formed on the resistance switching lay...

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Bibliographic Details
Main Authors TSENG, CHI CHUN, LI, YEN TE, OU YANG, TZU MING
Format Patent
LanguageChinese
English
Published 21.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A resistive random access memory (RRAM) structure and its manufacturing method are provided. The RRAM structure includes a bottom electrode layer formed on a substrate, a resistance switching layer formed on the bottom electrode layer, and a top electrode layer formed on the resistance switching layer. The top electrode layer forms a recess. The RRAM structure also includes a liner formed on a sidewall of the bottom electrode layer, a sidewall of the resistance switching layer, and a sidewall of the top electrode layer. The liner includes a hydrogen gas barrier material. The RRAM structure also includes an insulating layer formed on the liner. A material of the insulating layer is different from the hydrogen gas barrier material.
Bibliography:Application Number: TW20187114685