Structure for radiofrequency applications and process for manufacturing such a structure

The invention relates to a structure (100) for radiofrequency applications comprising: - a monocrystalline substrate (1), - a polycrystalline silicon layer (2) directly on the monocrystalline substrate (1), - an active layer (3) on the polycrystalline silicon layer (2), intended to receive radiofreq...

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Bibliographic Details
Main Authors DUVALLET, ALAIN, NGUYEN, BICH-YEN, MISCIONE, ANTHONY MARK, MALEVILLE, CHRISTOPHE, GOKTEPELI, SINAN
Format Patent
LanguageChinese
English
Published 21.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a structure (100) for radiofrequency applications comprising: - a monocrystalline substrate (1), - a polycrystalline silicon layer (2) directly on the monocrystalline substrate (1), - an active layer (3) on the polycrystalline silicon layer (2), intended to receive radiofrequency components, characterized in that at least a first portion (2a) of the polycrystalline silicon layer (2) extending from the interface (I) of the polycrystalline silicon layer (2) with the monocrystalline layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon. The invention further relates to a process for manufacturing such a structure.
Bibliography:Application Number: TW20165129964