NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND USE THEREOF

A negative-type photoresist resin composition is disclosed, which comprises: (A) 10 wt% to 50 wt% of a polysiloxane compound obtained by polymerization of plural monomers, wherein the monomers comprises siloxane monomers represented by the following formulas (a-1), (a-2) and (a-3), and a content of...

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Bibliographic Details
Main Authors CHANG, KUEI CHIA, LIN, FAN SEN, LAN, TA CHUN, HSU, JO PEI, CHANG, CHIH YI
Format Patent
LanguageChinese
English
Published 11.08.2020
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A negative-type photoresist resin composition is disclosed, which comprises: (A) 10 wt% to 50 wt% of a polysiloxane compound obtained by polymerization of plural monomers, wherein the monomers comprises siloxane monomers represented by the following formulas (a-1), (a-2) and (a-3), and a content of the siloxane monomer represented by the following formula (a-3) is 10 mol% to 50 mol% based on a total amount of the polysiloxane compound; (B) 0.1 wt% to 30 wt% of a silicate oligomer; (C) 0.1 wt% to 10 wt% of a photo acid generator; and (D) residual solvent. Herein, R1, R2, R3, R4 and R5 are defined in the specification. In addition, the present disclosure further provides a use of the aforesaid negative-type photoresist resin composition.
Bibliography:Application Number: TW20198101660