Capacitor of semiconductor integrated circuit and method for manufacturing the same

• Main Authors: HONG, SUNG MAN, HONG, SUNG WOONG, LEE, HAN MIN, OH, KWANG SUN, CHOI, PAN JU, RYU, KYUNG HAN
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a capacitor of a semiconductor integrated circuit and a method for manufacturing the same, for example a metal-insulator-metal (MIM) type capacitor of a semiconductor integrated circuit, which is capable of improving adhesive force between an electrode layer and a dielectric layer of a capacitor, and a method for manufacturing the same. For example, the present disclosure provides a capacitor for a semiconductor integrated circuit having a new structure, which is capable of preventing a delamination phenomenon on an interface between a lower electrode layer and a dielectric layer by further forming a buffer layer, which is capable of decreasing or compensating for a difference in a coefficient of thermal expansion, between a metal electrode layer and a dielectric layer, particularly, between the lower electrode layer and the dielectric layer, and a method for manufacturing the same.