TWI692775B

A semiconductor storage device includes a first semiconductor extending above a substrate and including a first part and a second part, a first word line at a first level above the substrate and facing the first part of the first semiconductor, a second word line at the first level above the substra...

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Bibliographic Details
Main Authors FUTATSUYAMA, TAKUYA, SHIRAKAWA, MASANOBU
Format Patent
LanguageChinese
Published 01.05.2020
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A semiconductor storage device includes a first semiconductor extending above a substrate and including a first part and a second part, a first word line at a first level above the substrate and facing the first part of the first semiconductor, a second word line at the first level above the substrate and facing the second part of the first semiconductor, a first cell transistor including a first area of the first part of the first semiconductor that faces the first word line, and a second cell transistor including a second area of the second part of the first semiconductor that faces the second word line, wherein during an operation of reading data from the first cell transistor, a first voltage that is less than a threshold voltage of the second cell transistor and greater than or equal to zero voltage is applied to the second word line.
Bibliography:Application Number: TW20187143257