A semiconductor imaging device having improved dark current performance

• Main Authors: HUANG, YI-MIN, WANG, CHEN-JONG, HUNG, FENGI, CHANG, CHUN-WEI, SHIU, FENG-JIA, YAUNG, DUN-NIAN, SZE, JHY-JYI, TAKAHASHI, SEIJI, HSU, WEING, WU, WEIUANG, LIU, JENNG
• Format: Patent
• Language: Chinese; English
• Published: 11.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.