Methods of defect inspection, method of manufacturing semiconductor device, and method for semiconductor processing

Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between m...

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Bibliographic Details
Main Authors CHANG, SHU HAO, HSU, YUAN FU, WANG, SHIH CHE, HUANG, TE CHIH, YU, TA CHING, CHEN, YI HAO, KAO, CHEN YEN
Format Patent
LanguageChinese
English
Published 21.10.2019
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTROGRAPHY
HOLOGRAPHY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TESTING
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Summary:Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
Bibliography:Application Number: TW20187117540