A single crystal furnace

• Main Author: DENG, XIANLIANG
• Format: Patent
• Language: Chinese; English
• Published: 21.02.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a single crystal furnace. The single crystal furnace comprises a crystal growth furnace cavity and a control system, wherein the control system comprises a data collection module and a data processing module, the data collection module is used for collecting real-time data in the crystal growth furnace cavity and comprises a simulation result database, the simulation resultdatabase is a complete crystal growth database constructed through analogue simulation. By carrying out comprehensive analogue simulation on the growth of a single crystal, analogue simulation data under different process conditions are obtained, and the temperature distribution and flow field distribution of the single crystal furnace can be monitored and analyzed in real time; the data detectedby the control system are intelligently interacted with an analogue simulation result in the crystal growth database, and the process is adjusted online timely based on real-time data, so that the traditional single control m