Semiconductor device and manufacturing method thereof

A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over...

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Bibliographic Details
Main Authors LIU, HSIANG WEI, WU, CHIA TIEN, CHU, WEI CHEN
Format Patent
LanguageChinese
English
Published 01.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over the first metal layer. The second metal layer includes a plurality of second metal lines that each extend along a second axis orthogonal to the first axis, and a second rail structure that extends along the first axis. The second rail structure is physically separated from the second metal lines. The second rail structure is located directly over the first rail structure. A plurality of vias is located between the first metal layer and the second metal layer. A subset of the vias electrically interconnects the first rail structure to the second rail structure.
Bibliography:Application Number: TW20170108018