Semiconductor devices including a stressor in a recess and methods of forming the same

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stres...

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Bibliographic Details
Main Authors LEE, CHUL-WOONG, SHIN, DONG-SUK, KIM, YOUNG-TAK, ROH, DONG-HYUN, LEE, NAE-IN, SHIN, GEO-MYUNG, KANG, HYUNUL, CHUNG, HOI-SUNG, PARK, PAN-KWI
Format Patent
LanguageChinese
English
Published 01.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.
Bibliography:Application Number: TW20176132301