Methods for producing integrated circuits having memory cells

Methods of producing integrated circuits are provided. An exemplary method includes patterning a source line photoresist mask to overlie a source line area of a substrate while exposing a drain line area. The source line area is between a first and second memory cell and the drain line area is betwe...

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Main Authors TAN, JUAN BOON, SIAH, SOH YUN, WANG, DAXIANG, KONG, YU JIN EUGENE, LEONG, PEY KIN, TEO, ZHIQIANG, LUO, LAIQIANG, SHUM, DANNY PAKUM, ZHANG, FAN, LI, PINGHUI
Format Patent
LanguageChinese
English
Published 11.09.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of producing integrated circuits are provided. An exemplary method includes patterning a source line photoresist mask to overlie a source line area of a substrate while exposing a drain line area. The source line area is between a first and second memory cell and the drain line area is between the second and a third memory cell. A source line is formed in the source line area. A source line dielectric is concurrently formed overlying the source line while a drain line dielectric is formed overlying a drain line area. A drain line photoresist mask is patterned to overlie the source line in an active section while exposing the source line in a strap section, and while exposing the drain line area. The drain line dielectric is removed from over the drain line area while a thickness of the source line dielectric in the strap section is reduced.
Bibliography:Application Number: TW20165133539