Method of lithography process with inserting scattering bars

The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The...

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Bibliographic Details
Main Authors HO, YU JU, CHANG, YA HUI, HUNG, AI JEN, LU, KUEI LIANG, HSIEH, HUNG CHANG
Format Patent
LanguageChinese
English
Published 21.03.2018
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Summary:The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars.
Bibliography:Application Number: TW20154140488