Semiconductor structure and method for manufacturing the same

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a fin structure formed over a substrate and a first gate structure formed across the fin structure. The semiconductor structure further includes a first source/drain structure formed in the...

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Bibliographic Details
Main Authors CHING, KUO CHENG, TSAI, CHING WEI, LEUNG, YING-KEUNG
Format Patent
LanguageChinese
English
Published 11.03.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a fin structure formed over a substrate and a first gate structure formed across the fin structure. The semiconductor structure further includes a first source/drain structure formed in the fin structure adjacent to the first gate structure and a first contact formed over the first source/drain structure. In addition, the first contact includes a first extending portion extending into the first source/drain structure.
Bibliography:Application Number: TW20154140068