COINTEGRATION OF BULK AND SOI SEMICONDUCTOR DEVICES

• Main Authors: MOLL, HANS-PETER, HOENTSCHEL, JAN, BAARS, PETER
• Format: Patent
• Language: Chinese; English
• Published: 11.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit product is disclosed including an SOI structure including a bulk semiconductor substrate, a buried insulation layer positioned on the bulk semiconductor substrate and a semiconductor layer positioned on the insulation layer, wherein, in a first region of the SOI structure, the semiconductor layer and the buried insulation layer are removed and, in a second region of the SOI structure, the semiconductor layer and the buried insulation layer are present above the bulk semiconductor substrate. The product further includes a semiconductor bulk device comprising a first gate structure positioned on the bulk semiconductor substrate in the first region and an SOI semiconductor device comprising a second gate structure positioned on the semiconductor layer in the second region, wherein the first and second gate structures have a final gate height substantially extending to a common height level above an upper surface of the bulk semiconductor substrate.