Vertical gate all around (vgaa) devices and methods of manufacturing the same

Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded...

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Main Authors CHANG, CHIAHAO, WANG, CHINCHI, CHEN, CHENGLONG, LIU, CHIWEN, SHIEH, MINGSHAN, LIEN, WAIYI, WANG, CHIHHAO
Format Patent
LanguageChinese
English
Published 11.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.
Bibliography:Application Number: TW20154138314